The T-series photoresist is designed to meet the requirements of advanced device fabrication, such as MEMS, Lithography, microfluidic, integrated circuit, bumping RDL (Redistribution Layer, 2/2um) / TSV (Through Silicon Via) process applications.
- Multiwavelength (I-line, g-line and broadband)
- High photo-speed. 150 to 800 mJ/cm2
- Film thickness from 2um to 90um
- Excellent resolution for 1/1um (lines/spaces) min.
- High aspect rate
- Au, Cu, Ni, SuAg plating application
- Vertical photoresist profile 90+/-1℃
- After plating, no evidence of footing/undercut defectives
- Easy to strip by commercial NMP / DMSO based stripper